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Semiconductor device
Results: 2519

#	Item
401	Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 Effects of thermal annealing on charge density and N chemical states in HfSiON films studied by photoemission spectroscopy Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:36:05 Technology Electronic engineering High-k dielectric Transistors Oxide Chemical vapor deposition Vacuum Photoemission spectroscopy Chemistry Semiconductor device fabrication Physics
402	STANDARD RECTIFIERS FAST RECOVERY RECTIFIERS ULTRA FAST RECOVERY RECTIFIERS SCHOTTKY RECTIFIERS Add to Reading List Source URL: www.solidstateindia.com Language: English - Date: 2011-07-24 11:39:49 Rectifier Diode Power semiconductor device Inverter Center tap Quadrac Transistor Schottky diode Electrical engineering Electromagnetism Semiconductor devices
403	Photon Factory Activity Report 2010 #28 Part BSurface and Interface 2C/2008S2003 Relationship between interfacial chemical states and resistive switching in Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2012-01-30 04:32:45 Semiconductor device fabrication Reduction potential Redox Chemistry Materials science Ohmic contact
404	The CNST News W I N T E RW W W . N I S T . G O V / C N S T Add to Reading List Source URL: nist.gov Language: English - Date: 2011-02-23 14:33:55 Microtechnology Electron microscopy Semiconductor device fabrication Nanomaterials Emerging technologies Extreme ultraviolet lithography Focused ion beam Electron Nanolithography Physics Materials science Chemistry
405	JOURNAL OF APPLIED PHYSICS 97, Production and recovery of defects in phosphorus-implanted ZnO Z. Q. Chen,a) A. Kawasuso, Y. Xu, and H. Naramoto Advanced Science Research Center, Japan Atomic Energy Researc Add to Reading List Source URL: www.geocities.jp Language: English - Date: 2004-12-15 21:11:22 Materials science Semiconductor device fabrication Zinc oxide Annealing Positron annihilation spectroscopy Center of Excellence in Nanotechnology at AIT Chemistry Spectroscopy Ion implantation
406	Surface and Interface 15C/2002G197 Quantitative Analysis of Lattice Distortion due to Surface Treatment of Bias Sputtering by Extremely Asymmetric X-Ray Diffraction Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:30:27 Thin film deposition Science Chemistry Chemical engineering Semiconductor device fabrication Materials science Coatings Sputtering
407	Improvement of Critical Temperature of Superconducting NbTiN and NbN Thin Films Using the AlN Buﬀer Layer Tatsuya Shiino, Shoichi Shiba, and Nami Sakai Department of Physics, The University of Tokyo, Hongo, Bunkyo-ku, Add to Reading List Source URL: www.resceu.s.u-tokyo.ac.jp Language: English - Date: 2010-03-24 04:38:00 Semiconductor device fabrication Thin film deposition Aluminium nitride Indium nitride Sputter deposition Light-emitting diode Gallium nitride Epitaxy Lattice constant Chemistry Matter Nitrides
408	Surface and Interface 17A, 17C/2002G043 Morphology of Polystyrene Surface near Glass transition Temperature; X-ray Reflectivity Study Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:30:35 X-ray reflectivity Reflectivity Wafer Polystyrene Physics Science Semiconductor device fabrication Chemistry Polymer
409	The CNST News W I N T E RW W W . N I S T . G O V / C N S T Add to Reading List Source URL: nist.gov Language: English - Date: 2012-01-26 16:00:44 Microtechnology Semiconductor device fabrication Photonics Emerging technologies National Institute of Standards and Technology Etching Photolithography Laser Nanotechnology Materials science Physics Technology
410	Mode Note Scanning Capacitance Microscopy (SCM) High Resolution and High Sensitivity Imaging of Charge Distribution Characterization of Semiconductor Device with Non-Destructive Technique and High Spatial Resolution Add to Reading List Source URL: www.nanowerk.com Language: English - Date: 2009-12-27 18:00:00 Physics Technology MOSFET Capacitance Depletion region Diode P–n junction Capacitor Field-effect transistor Scanning probe microscopy Scanning capacitance microscopy Electromagnetism

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